| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality low-cost semiconductor substrate in which occurring cause of leakage current is eliminated by precisely controlling the temperature and the time for high-temperature annealing. SOLUTION: A silicon wafer is annealed in a hydrogen atmosphere or an inert gas atmosphere, where the heat-treatment temperature is 1,100 deg.C or higher and the relation 1×1015e-0.0298X<Y<9×1014e-0.0281X holds between a heat- treatment time Y and a heat-treatment temperature X.
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