发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology capable of forming a multilayer wiring having W plugs with high reliability at a low cost. SOLUTION: An outside W film, having a hole pattern 5, is removed 80 to 90% by an etch back method, and then the remaining outside W film (remaining W film 7a) having a hole pattern 5 and an adhesive layer 6 are removed by a chemical-mechanical polishing method.
申请公布号 JP2001274238(A) 申请公布日期 2001.10.05
申请号 JP20000088437 申请日期 2000.03.28
申请人 HITACHI LTD 发明人 TORII KATSUHIRO;ASHIHARA YOJI
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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