SILICON SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a silicon single crystal substrate capable of attaining no defect on the surface layer by an annealing at a lower temperature for a shorter time than before and to provide a method for producing the same. SOLUTION: This silicon single crystal substrate is characterized in that the silicon single crystal substrate is a silicon single crystal substrate having >=1×1014 atoms/cm3 and <=2×1016 atoms/cm3 substrate nitrogen concentration and has an oxygen concentration at a depth of 1μm from the surface of the substrate being <=70% of the oxygen concentration at the center of thickness of the substrate, and <=105 oxygen precipitate density having >=20 nm size in an area shallower than 5μm from the surface of a wafer. This method for producing the silicon single crystal substrate is also provided.