发明名称 |
Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memory |
摘要 |
To provide a method that can be used to form a high-qualility ferroelectric film by forming good nuclei when using the sputtering method to manufacture a PZT capacitor or other forroelectric capacitors using Ir or other electrode substances in addition to Pt for the electrode. In the method for manufacturing a PZT ferroelectric capacitor CAP, after titanium film 31 is deposited on Ir electrode 6, lead oxide 32 is deposited at a substrate temperature higher than the crystallization temperature of lead titanate using the sputtering method. Lead zirconate titanate 34 is then deposited at a substrate temperature higher than the aforementioned substrate temperature using the sputtering temperature. Afterwards, a heat treatment of the deposited film is performed to produce PZT film 17.
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申请公布号 |
US6297085(B1) |
申请公布日期 |
2001.10.02 |
申请号 |
US19970988687 |
申请日期 |
1997.12.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
AOKI KATSUHIRO;FUKUDA YUKIO;MURAYAMA IKUKO;NUMATA KEN;NISHIMURA AKITOSHI |
分类号 |
H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/115;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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