METHOD FOR ISOLATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for isolating a semiconductor device is provided to isolate a semiconductor device by forming a trench on a surface of a semiconductor substrate. CONSTITUTION: A buffer oxide layer(12) and a nitride layer are laminated sequentially on a semiconductor substrate(11). A photoresist pattern is formed on the nitride layer. A trench(T) is formed by etching the nitride layer, the buffer oxide layer(12), and the semiconductor substrate(11). The photoresist pattern is removed. Both edges of the nitride layer are rounded by performing an etching process for the nitride layer. A liner oxide layer(15) is formed within the trench(T). An insulating layer is deposited on the rounded nitride layer(13a). A trench insulating layer pattern is formed by etching the insulating layer. The rounded nitride layer(13a) is exposed by polishing the trench insulating layer pattern. The rounded nitride layer(13a) is etched and removed.