| 发明名称 |
Group III-V compound semiconductor wafers and manufacturing method thereof |
| 摘要 |
A high quality Group III-V compound semiconductor wafer is provided which is free from precipitation of a Group V element on its surface. In the group III-V compound semiconductor wafer of the present invention, the number of acid material atoms per 1 cm2 is at most 5x1012.
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| 申请公布号 |
US2001023022(A1) |
申请公布日期 |
2001.09.20 |
| 申请号 |
US20010780872 |
申请日期 |
2001.02.08 |
| 申请人 |
NISHIURA TAKAYUKI;MIYAJIMA HIDEKI |
发明人 |
NISHIURA TAKAYUKI;MIYAJIMA HIDEKI |
| 分类号 |
H01L21/304;C30B29/42;C30B33/00;H01L21/02;(IPC1-7):B32B9/00 |
主分类号 |
H01L21/304 |
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