| 摘要 |
<p>1,041,466. Semi-conductor devices. INTERMETALL GESELLSCHAFT FUR METALLURGIE UND ELEKTRONIK. May 15, 1963 [May 15, 1962], No. 19381/63. Heading H1K. An ohmic contact is made to a P(N)-type zone of a semi-conductor body by alloying to it at a temperature of less than 100‹ C. a material comprising acceptor (donor) impurity and then covering the material with a protective layer of metal or semi-conductor. Suitable acceptor containing materials are gallium and certain alloys of gallium or aluminium with such carrier metals as indium, lead, cadmium, zinc, bismuth and tin while certain alloys of phosphorus or arsenic with these carrier metals are suitable donor materials. Materials suitable for the protective layer are iron, chromium, nickel, palladium, platinum, gold and semi-conductor material, e.g. germanium, of the same conductivity type as the zone. In the embodiment a germanium wafer 3 (Fig. 1) comprising PNP transistors with evaporated emitter and base contacts of aluminium and gold-antimony respectively, is etched to the form shown. stuck to an alumina support 1 with picein and then etched down to line 11 to isolate the transistors. The low melting material and protective layer are then vapour deposited in turn on the collector zones and the transistors separated by dissolving away the picein and mounted in conventional manner.</p> |
