发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To protect an input MOS transistor without decreasing the operating speed in ordinary signal processing for the input of a second high level, limiting the operating condition of a circuit and decreasing the operating speed at the time of second high level input in a semiconductor integrated circuit to which the second level further higher than an ordinary high level is inputted. SOLUTION: This circuit is provided with a high potential detecting circuit 8 for detecting that an input IN is the second high level, a NAND gate circuit 50 for inputting the output of a NOR gate circuit 10 and an output S1 of the high potential detecting circuit, and pMOS transistor TP4 for pulling up an output point t N1 of the NOR gate circuit to a power supply voltage VDD. When the input IN is the second high level, the output S1 of the high potential detecting circuit becomes 'L' and an output OUT does not depend on the output of the NOR gate circuit 10. Then, the output point N1 of the NOR gate circuit 10 is directly pulled up to the power supply voltage by the output S1 of the high potential detecting circuit.
申请公布号 JP2001237686(A) 申请公布日期 2001.08.31
申请号 JP20000049122 申请日期 2000.02.25
申请人 NEC MICROSYSTEMS LTD 发明人 KOGA HIROYOSHI
分类号 H03K19/0175;(IPC1-7):H03K19/017 主分类号 H03K19/0175
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