METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT HAVING MULTILAYER WIRING STRUCTURE

摘要

A method of manufacturing an LSI comprising the steps of forming basic elements such as transistors on a semiconductor substrate, stacking a plurality of wiring layers on the substrate, connecting the wiring layers to the basic elements to construct sub-circuits, connecting the sub-circuits to fabricate sub-circuits of large scales, and further successively enlarging the scales of the sub-circuits to form a complex constitution, wherein, at a stage when an intermediate wiring layer has been formed, 100% inspection, function inspection, stuck fault inspection, static power-source current inspection, and the like, of the basic elements and sub-circuits that have bean wire-connected are performed. Thereafter wiring connection inspection is conducted at every completion of a wiring layer. Failure detection rate is enhanced, and inspection cost and manufacturing cost are reduced.