| 摘要 |
PURPOSE: A shower head apparatus for radical deposition is provided to improve the uniformity of a thin film, to increase the efficiency of deposition, and to minimize the generation of particle. CONSTITUTION: The shower head apparatus comprises a shower head upper plate(11) having a first heater(12), a shower head lower plate(13), a material gas injection pipe(14), and a flow meter(27). A first buffer part(15a) for uniformly dispersing the material gas injected from the material gas injection pipe is provided in the upper plate, and a first shower head(15) is provided. The first shower head has a material gas injection hole(15c) on the bottom plate(15b) for injecting the material gas at regular flow rate. The bottom plate of the first shower head serves to generate the plasma by receiving the RF from a RF power source(19) having a RF rod(19a) and a RF connector(19b). A second buffer part(18a) for uniformly dispersing the plasma gas is provided under the first shower head, and a second shower head(18) is provided. The second shower head has a plasma generating gas injection hole(18c) on the bottom plate(18b), and a penetrating bore(18d) facing with the material gas injection hole. The shower head apparatus for radical deposition separates the material gas and the plasma generating gas before injecting them, and activates the material gas by using the plasma, thereby the uniformity of the thin film is improved.
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