| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the realization of a structure where high transfer efficiency and a large amount of transfer charge are both satisfied was important to the reduction in the size of a buried channel CCD that is used for a charge transfer device. SOLUTION: With the impurity distribution of the channel layer of a buried channel CCD, a part where impurity concentration is maxim is located at the deepest position in a semiconductor substrate, and potential gradient at an interface part with the insulation film in a depletion state is as gentle as potential gradient in the insulation film, thus achieving the charge transfer device having both high transfer efficiency and large amount of transfer charge. Especially, the high transfer efficiency and the large amount of transfer charge are strongly reflected by resolution characteristics, color reproduction characteristics, and dynamic ranges as the image pickup characteristics of a CCD-type image pickup device, thus avoiding the deterioration of characteristics due to the reduction of the size of the CCD caused by the reduction of the dimension of pixels.
|
