| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided, which accomplishes a process simplification and a cost down at the same time, by varying the process proceeding to enable to form a PBL(P Buried layer) and an NBL(N Buried layer) of a BiCMOS. CONSTITUTION: A pad oxide is formed on a semiconductor substrate(100). A photoresist pattern is formed on the pad oxide using a photo lithography process to reveal an NBL formation part. An N-type impurity ion is implanted into the resulted structure using the photoresist pattern as a mask. Thus an N-type impurity implanted region is formed selectively only in the substrate of the NBL formation part. After removing the photoresist pattern, a P-type impurity ion is implanted. Thus a P-type impurity ion implanted region is formed over the whole region around the surface in the substrate. A PBL(108a) is formed on the PBL formation region and an NBL(106a) is formed on the NBL formation region by performing a drive-in process. After blanket-etching an oxide by a wet-etching method, an epitaxial layer(110) is formed on the resulted structure.
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