发明名称 HIGH-TEMPERATURE AND HIGH-PRESSURE PROCESSING APPARATUS FOR SEMICONDUCTOR MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a high-temperature and high-pressure processing apparatus which prevents a semiconductor material from being contaminated with particles which are generated from a heater, and is suited to a treatment of the material. SOLUTION: A high-temperature and high-pressure processing apparatus for a semiconductor material, which treats the material under the atmosphere of high-temperature and high-pressure gas, is provided with a pressure container 3, a heater 15 which is installed in the container 3 and is used for hating the material, and hermetic casings 35 and 45 constituted in such a way as to encircle the heater 15 with a material of a low gas permeability. A first gas passage 40 communication with the interiors and exteriors of the casings 35 and 45 is formed in the casings 35 and 45, and a filter 41 for trapping dusts is provided on the passage 40.
申请公布号 JP2001223221(A) 申请公布日期 2001.08.17
申请号 JP20000029415 申请日期 2000.02.07
申请人 KOBE STEEL LTD 发明人 INOUE YOICHI;SAKASHITA YOSHIHIKO;ISHII TAKAHIKO
分类号 H01L21/3205;H01L21/324;H01L23/52;(IPC1-7):H01L21/324;H01L21/320 主分类号 H01L21/3205
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