发明名称 Semiconductor integrated circuit device
摘要 A memory macro is a combination of functional modules such as a main amplifier module, memory bank modules of which each memory bank operates independently, a power source circuit, etc. The storage capacity of the memory macro can be easily changed from a large capacity to a small one by changing the number of the memory bank modules. A control circuit in the memory bank modules of the memory macro has an additional address comparing function. Therefore, the same page can be accessed at high speed without providing any control circuit outside the memory macro. In addition, a module having a function such as a memory access sequence control is provided and, when memory access is made, identification information is issued at the time of inputting/outputting address or data. Therefore, high-speed memory access can be realized by checking the coincidence between the data and address with the ID and controlling the memory access sequence so that the address inputting order and data outputting order can be changed.
申请公布号 US2001014052(A1) 申请公布日期 2001.08.16
申请号 US20010826004 申请日期 2001.04.05
申请人 HITACHI, LTD. 发明人 AYUKAWA KAZUSHIGE;WATANABE TAKAO;NARITA SUSUMU
分类号 G11C8/00;G11C8/12;(IPC1-7):G11C8/00 主分类号 G11C8/00
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