METHOD OF FORMING A GATE OXIDE LAYER

摘要

A method of forming a gate oxide layer according to the invention is disclosed. In the method, a furnace or rapid thermal oxidation (RTO) chamber where a semiconductor substrate having a native oxide layer formed thereon is located is supplied with a high-temperature hydrogen gas to deoxidize the native oxide layer. Then, a gate oxide layer is formed over the semiconductor substrate. The semiconductor substrate having the gate oxide layer formed thereon is transferred through a vacuum transmission system into a reaction chamber where a polysilicon layer is formed on the gate oxide layer. Thus, the semiconductor substrate can avoid exposure to an oxygen-containing atmosphere to re-form a native oxide layer thereon.