| 摘要 |
A semiconductor memory device is provided for simultaneously reading data of a plurality of bits from its memory cell region and outputting the data successively to an external environment, and includes: an external output section whose output state to the external environment is altered for one output logical level and not altered for another output logical level; a output level generation section for assigning a logical level corresponding to the content of bit-data to a bit freely selected out of the data, and assigning another output logical level to another bit; and a supply section for successively supplying the output logical levels, generated by the output level generation section to correspond with respective bits of the data, to the external output section.
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