GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LIGHT- EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a light-emitting device with improved external emission efficiency in a gallium nitride system compound semiconductor light-emitting device with an n-type electrode that is formed around a p-type electrode or on the reverse and side sides of a substrate. SOLUTION: The gallium nitride system compound semiconductor light- emitting device is in a configuration consisting of a metal thin-film layer or an oxide semiconductor layer where an n-type electrode that is formed at the surrounding on the same plane as a p-type electrode or on the reverse and side surfaces of a substrate transmits light and is in ohmic contact, and a laminate consisting of them.