| 摘要 |
An interconnect structure of a semiconductor device comprising: a semiconductor substrate; a plurality of interconnects including a subject interconnect; a plurality of interlayer dielectric films disposed between the adjacent interconnects; and a concave or convex portion formed on the surface of the semiconductor device corresponding to the desired portion of the subject interconnect is disclosed. When some deficiency is generated on the subject interconnect, the deficiency can be detected by measuring the corresponding concave or convex portion on the surface of the semiconductor for prompt inspection because the concave or convex portion is connected to the subject interconnect.
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