发明名称 THICK-FILM ETCH-BACK PROCESS FOR USE IN MANUFACTURING FINE-LINE HYBRID CIRCUITS
摘要 A method for making thick-film conductor line patterns having conductor linewidths and spacings which are each less than about 5 mils. The method is especially useful in manufacturing fine-line hybrid circuits. The method involves forming a conductor line circuit pattern of thick-film material on a principle surface of a substrate. The principle surface of the substrate is masked so that selected portions of the conductor line circuit pattern are exposed. The exposed portions of the pattern are then removed from the substrate to reduce the conductor linewidths and spacings of the pattern to less than about 5 mils.
申请公布号 US2001012692(A1) 申请公布日期 2001.08.09
申请号 US19980204405 申请日期 1998.12.02
申请人 MILLER ROBIN L.;NGUYEN PHUNG DAC 发明人 MILLER ROBIN L.;NGUYEN PHUNG DAC
分类号 H05K1/09;H05K3/06;H05K3/12;H05K3/26;H05K3/46;(IPC1-7):H01L21/44;H01L21/302;H01L21/461 主分类号 H05K1/09
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