| 摘要 |
PROBLEM TO BE SOLVED: To simply and securely replace a defective memory cell by a redundant memory cell by improving a program process for a fuse element at the time of using a redundant circuit of a SRAM. SOLUTION: This device is provided with a plurality of normal address decoders 21a for selecting a normal memory cell, a plurality of redundant address decoders 21b for selecting a redundant memory cell, fuse elements 50 for programming provided at the output side of each normal address decoder and cut off to make the normal address decoder a non-selection state, and address registers 60x-600 provided corresponding to each normal address decoder, and generating a replacement address signal for specifying an address of a redundant address decoder by which a normal address decoder corresponding to the fuse element for programming is replaced in a state in which a fuse element for program is cut off.
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