| 摘要 |
A method for evaluating the concentration of metallic impurities in a silicon wafer, characterized in that concentrated sulfuric acid is dropped onto a silicon wafer, metallic impurities forming a solid solution in the silicon wafer are extracted into the sulfuric acid, and the metallic impurities in the sulfuric acid is chemically analyzed. Conventionally, there has been a problem, in addition to how to improve the sensitivity of the analyzer, how to extract a metal contained in silicon to the surface and to collect it in order to evaluate the metal in a silicon bulk with good sensitivity. The present invention has solved the conventional problem. |
