METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SIMULTANEOUSLY FORMING STORAGE ELECTRODE AND STORAGE NODE CONTACT

摘要

PURPOSE: A method for manufacturing a semiconductor memory device capable of simultaneously forming a storage electrode and a storage node contact is provided to increase size of s storage node while reducing size of a BC by using a spacer. CONSTITUTION: A transistor having a source/drain(46) is formed on a semiconductor substrate(46). A bitline(52) is connected to the drain. The first inter-layer dielectric covers the resultant on which the bitline is formed. The first etch stop layer(56), the second inter-layer dielectric for forming a storage node and the second etch stop layer are consecutively formed on the first inter-layer dielectric. The second etch stop layer and the second inter-layer dielectric film are consecutively removed on a portion where the storage node is formed. A conductive spacer(62) is formed on a side wall of the second etch stop layer and the second inter-layer dielectric. The first etch stop layer and the first inter-layer dielectric are removed on a portion where the storage node is formed to form a contact hole. The contact hole exposes the semiconductor substrate. A conductive layer is deposited within the contact hole to form a storage node connected to the source. The second etch stop layer and the second inter-layer dielectric are removed.