发明名称 Method for forming a bottom electrode of a storage capacitor
摘要 The present invention provides a method of forming an electrode, comprising the steps of: forming a dummy electrode having an uneven side face; forming a template insulating film which completely buries the dummy electrode; removing the dummy electrode with leaving the template insulating film so as to form a hole in the template insulating film, wherein a shape of the uneven side face of the dummy electrode as removed is transferred to an inside wall of the hole; filling a metal film into the hole of the template insulating film, wherein the shape of the uneven inside wall of the hole is transferred to a side face of the metal film; and removing the template insulating film to form a metal electrode with an uneven side face.
申请公布号 US2001009787(A1) 申请公布日期 2001.07.26
申请号 US20010761692 申请日期 2001.01.18
申请人 NEC CORPORATION, 发明人 YAMAMOTO ICHIRO
分类号 H01L23/522;H01L21/02;H01L21/28;H01L21/768;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20 主分类号 H01L23/522
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