SEMICONDUCTOR DEVICE HAVING PROTECTION UNIT FROM ELECTROSTATIC DISCHARGE

摘要

PURPOSE: A semiconductor device is provided to improve a reliance of a device operation by preventing fin capacitance from being increased through formation of an opposite conductive impurity area only on the edge portion. CONSTITUTION: A P-well(12) is formed on a substrate(10). A field oxide(14) is formed on the portion of the P-well(12). An n+ type diffusion area(16) is formed on the both sides of the field oxide(14) with a rectangular shape having a round edge. A p+ type impurity area(18) is formed between one side of the field oxide(14) and the n+ type diffusion area(16). Vss which is connected to the other n+ type diffusion area(16). The p+ type impurity area(18) is able to be formed before the step of forming the n+ type diffusion area(16) or after the step of forming the n+ type diffusion area(16).