| 摘要 |
PURPOSE: A method for manufacturing a single electron transistor is provided to maximize reliability of the device by improving the uniformity and reappearance of a dot. CONSTITUTION: The method for manufacturing a single electron transistor injects impurity ions into a silicon layer(31c) of a silicon on insulator(SOI) wafer to form source and drain regions. The silicon layer is patterned to define a single electron transistor formation region. After the first insulating layer(32) is formed on the patterned silicon layer, a given portion of the first insulating layer is removed to expose a given portion of the silicon layer. The exposed silicon layer is etched to form a trench through which an oxide film(31b) of the SOI wafer can be exposed. The second insulating layer(35) is formed on the etched portion of the silicon layer. A dot(36a) is formed within the trench so that a conductive material can be buried. After the third insulating layer(37) is formed on the dot, a control gate(38a) is formed on the third insulating layer.
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