| 摘要 |
PURPOSE: A method for manufacturing a copper interconnection of a semiconductor device is provided to make a copper interconnection surrounded by a dual diffusion blocking layer so that a copper diffusion blocking effect from the copper interconnection to a peripheral insulation layer, by sequentially forming an oxide layer and a conductive material diffusion blocking layer, and by sequentially forming a conductive material diffusion blocking layer and an aluminum oxide layer on the copper interconnection. CONSTITUTION: A substrate(1) wherein an insulation layer including a damascene pattern is prepared. An aluminum oxide layer is formed on the entire surface of the insulation layer including the damascene pattern. A conductive material diffusion blocking layer is formed on the aluminum oxide layer. Copper is deposited in the damascene pattern, and a copper interconnection(5) is formed by a chemical mechanical polishing(CMP) process.
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