发明名称 |
ADDRESS BUFFER OF FLASH MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an address buffer of a flash memory including a nonvolatile section selecting code cell which can select an arbitrary sector so that a normal sector can be utilized by making a memory sector in which defect occurs in a highly integrated core product a disable-state. SOLUTION: This address buffer of a flash memory is provided with a buffer section buffering an external address, a code storing section storing a code selecting a memory sector of a flash memory, and a setting section outputting internal addresses IA17 and IA18 selecting a memory sector by a code outputted from the code storing section and by a sector selecting address in the external address.</p> |
申请公布号 |
JP2001189097(A) |
申请公布日期 |
2001.07.10 |
申请号 |
JP20000384781 |
申请日期 |
2000.12.19 |
申请人 |
HYUNDAI ELECTRONICS IND CO LTD |
发明人 |
AHN BYUNG JIN;BOKU SHOKI;KIN MINKEI;KIN SHOU |
分类号 |
G11C16/06;G11C8/06;G11C16/00;G11C16/08;G11C29/04;(IPC1-7):G11C29/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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