发明名称 |
Metal-insulator-metal capacitor for copper damascene process and method of forming the same |
摘要 |
A capacitor structure formed on a semiconductor substrate may include a first interconnect wiring (such as copper damascene) and a first conductive barrier layer in contact with the first interconnect wiring. A first capacitor plate, a capacitor dielectric structure and a second capacitor plate may also be included over the first conductive barrier layer. A second conductive barrier layer may be formed on the second capacitor plate and a second planar insulating structure may be formed over the second capacitor plate. Finally, a second interconnect wiring may be embedded within a second planar insulator structure.
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申请公布号 |
US6259128(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19990298122 |
申请日期 |
1999.04.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADLER ERIC;TROMBLEY HENRY W. |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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