| 摘要 |
PURPOSE: A reflection mask for an EUV(Extreme Ultra-Violet) exposure apparatus is provided, which can obtain resolution below 0.07 micrometer using an optical path difference, instead of a method of increasing a diameter of a lens or reducing a wavelength of a light. CONSTITUTION: The reflection mask is installed in an extreme ultra-violet exposure apparatus using a light source of 13.4 nm wavelength. A phase inversion layer(56) is comprised on a reflection region between stacked layers of a buffer layer(54) and an absorption layer(55). The phase inversion layer comprises a capping layer(53) and a reflection layer(52) including a Mo film(52b) and a silicon film(52a). The phase inversion layer is comprised in the first reflection region but is not comprised in the second reflection region and is comprised in the third reflection region adjacent to the second reflection region.
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