发明名称 DRY ETCHER FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: A dry etcher for manufacturing a semiconductor is provided to prevent gas leakage caused by damage of a gas line and to easily maintain and control a system, by making an upper assembly open/shut, and by preventing damage to the gas line by using a power supply applying part. CONSTITUTION: A predetermined lower process chamber is formed in a lower assembly(53). An upper process chamber and the lower process chamber constitute a process chamber(55). An upper assembly(51) is formed in an upper portion of the lower assembly to be capable of being opened and shut, having the upper process chamber. A gas supplying part supplies gas to the process chamber. A lower gas line(61) transfers the gas of a gas storing tank(59) to the upper portion of the lower assembly, installed to penetrate the lower assembly. An upper gas line(65) transfers the gas of the lower gas line to the upper assembly, installed in the upper assembly so that the upper gas line is connected/disconnected to/from the lower gas line according as the upper assembly opens/shuts. A gas injection hole(67) injects the gas supplied through the upper gas line to the process chamber.
申请公布号 KR20010063202(A) 申请公布日期 2001.07.09
申请号 KR19990060193 申请日期 1999.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, JONG DAE
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址