METHOD FOR FORMING SELF-ALINED CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a self-aligned contact of a semiconductor device is provided to enhance the productivity of a semiconductor device by using a difference between etching selective ratio of an SEG(Selective Epitaxial Growth) layer and an interlayer dielectric to perform easily a self-aligned contact process. CONSTITUTION: A plurality of word line is formed on a semiconductor substrate(11). An SEG layer(23) is formed on a contact region between the word lines. An air gap(21) is formed on the non-contact region by forming an interlayer dielectric(25) as a PECVD(Plasma Enhanced Chemical Vapor Deposition) oxide layer on the whole surface including a non-contact region between the word lines. A contact hole(27) for exposing the SEG layer is formed by etching the interlayer dielectric.