| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is to provide a uniform particle dispersion and a smooth surface roughness to the device using a metal organic chemical vapor deposition(MOCVD). CONSTITUTION: The first ferroelectric film(27) is formed on a substrate(21) containing a lower electrode(26) using an MOCVD, while a temperature of the substrate is maintained at 350 to 450 deg.C. In state of rising the temperature of the substrate to 500 to 700 deg.C, the second ferroelectric film(28) is formed on the substrate. In state of lowering the temperature of the substrate to 350 to 450 deg.C, the third ferroelectric film(29) is formed on the substrate. A platinum is deposited on the third ferroelectric film to form an upper electrode(30). The substrate is annealed in an atmosphere of oxygen at a temperature of 500 to 800 deg.C, during 10 to 60 minutes to improve an electrical characteristic of a ferroelectric capacitor.
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