| 摘要 |
PURPOSE: To provide a method for separating an element of a semiconductor integrated circuit device capable of miniaturizing non-volatile memory and high breakdown voltage transistor without degradation in the performance of the non-volatile memory and a transistor for a logic circuit, without losing an existing design concept of transistor for the logic circuit, and without missing the manufacturing margin. CONSTITUTION: A first separating trench is formed to a predetermined depth in an element separating region where a high breakdown voltage semiconductor device against a comparatively high applied voltage. A third separating trench is formed by etching the first separating trench to a predetermined depth of a second separating trench. The high breakdown voltage semiconductor elements are separated by an oxide film filled in the third separating trench. A low breakdown voltage semiconductor elements are separated by an oxide film filled in the second separating trench of a predetermined depth at an element separating region where the low breakdown voltage semiconductor elements with comparatively low applied voltage are mounted.
|
