SEMICONDUCTOR DEVICE FOR REDUCING RESISTANCE OF SILICIDE LAYER AND LEAKAGE CURRENT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for fabricating the same are to improve electric characteristics of a silicide layer formed on a gate and a junction region. CONSTITUTION: A gate oxide layer(21) and the first gate(22) are formed on a silicon substrate(20). The first gate consists of a polysilicon layer. A source drain junction region(23) is formed in the silicon substrate. A cleaning process is performed to remove all oxide layer components remaining on the silicon substrate. Then, a large amount of Si locally remains on the gate and the source drain junction region by performing a Si ion implantation process. A Ti layer is deposited on the entire structure. A titanium silicide layer is formed by performing the first annealing process. Then, a titanium silicide layer(26A) is formed by performing the second annealing process. An interlayer dielectric(27) is formed to cover the entire structure. The first gate is exposed by removing the Ti silicide layer on the first gate and the interlayer dielectric through a CMP(chemical mechanical polishing) method. A polysilicon layer is deposited on the entire structure. The second gate(28A) is formed by selectively etching the polysilicon layer.