PLASMA ETCHING METHOD USING PLASMA ETCHING EQUIPMENT

摘要

PURPOSE: A plasma etching method using plasma etching equipment is provided to prevent lowering of the productivity by improving etching uniformity of an oxide layer. CONSTITUTION: A wafer(2) formed with an oxide layer is inserted into a plasma etching chamber. The first process condition is set up in the etching chamber to perform the first plasma etching process. The first plasma etching process for the wafer(2) is performed by using a reaction gas of a plasma state. The second process condition is set up in the etching chamber to perform the second plasma etching process. The second plasma etching process for the wafer(2) is performed by using the reaction gas of the plasma state.