| 摘要 |
PURPOSE: To provide an SOI semiconductor device comprising built-in variable resistance element which can take a larger width in change of resistance value, namely a control electrode which can control electrical characteristics. CONSTITUTION: There is provided an SOI semiconductor device where a resistance body 4, which is completely insulated and separated with an insulation film 2a, is formed with a surface semiconductor layer of the SOI substrate laminating the embedded insulation film 2 and surface semiconductor layer and the resistance value of the resistance body 4 is set, depending on the impurity concentration included in the surface semiconductor layer and a size of the resistance body 4.
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