| 摘要 |
PURPOSE: A planarization method of a semiconductor device is provided to permit an easy end-point detection of chemical mechanical polishing. CONSTITUTION: In the method, after the first layer(2) is formed on a semiconductor wafer(1) and patterned, the second layer(3) of silicon is formed on the entire surface. Thus a surface of the second layer(3) becomes rough due to the patterned first layer(2). The second layer(3) is then planarized through the chemical mechanical polishing, producing slurry comprised of water, potassium hydroxide(KOH), and colloidal SiO2. Slurry is titrated with HNO3 and further the acidity of slurry is measured. When the acidity of slurry is suddenly reduced, the polishing is stopped.
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