| 摘要 |
PURPOSE: An element isolation method for semiconductor apparatus is provided to prevent s threshold voltage for an element isolation membrane and a junction boundary part from being lowered by segregating a boron ion coating the element isolation membrane and the substrate. CONSTITUTION: An etching mask(22) exposing an element isolation membrane is formed on the predetermined portion of the semiconductor substrate(20). The first trench is formed at the semiconductor substrate(20) by removing within the range of first depth on the semiconductor substrate(20). A side wall include an insulator, which is formed at the internal side of the first trench. The insulator expose the semiconductor substrate(20) of the bottom portion of the trench. The second trench(T2) is formed at the semiconductor substrate(20) by removing within the range of first depth on the semiconductor substrate(20). The first trench and the second trench(T2) reclaim by the insulating membrane. The etching mask(22) is removed by the dry etching method.
|
