| 摘要 |
PURPOSE: A semiconductor memory is provided to improve the leakage current and the integration level by allowing a channel region at an accumulation state not a depletion state and making a voltage applied to a cell region P well, when a cell transistor is turned off as an off-voltage condition of the cell transistor is changed. CONSTITUTION: A semiconductor memory includes memory cells having a plurality of P wells(2) and N wells(3) at each regions of a substrate(1). The memory cells are located on a selected P well of the plurality of P wells and has a cell transistor and a capacitor. NMOS transistors are located on the remaining P wells where the memory cells are not located. PMOS transistors are located on the N wells. A channel region is at accumulation mode upon off of the cell transistor by applying a ground voltage to the plurality of the entire P wells and making the gate voltage -1V upon off of the cell transistor.
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