| 摘要 |
PURPOSE: A method for manufacturing a SCM(Scanning Capacitance Microscope) sample is provided to smoothly observe doping profile of a semiconductor by reducing the surface roughness by removing scratch generated in the surface of the sample with a sputtering method, thereby accurately measuring the result of performing a semiconductor process. CONSTITUTION: A method for manufacturing a SCM sample includes the step of preparing sample pieces to be observed in regular size(S100), vertically cutting the bonded sample(S120), coating metal on the cut surface(S140), attaching the metal-coated part to a mount(S160), inserting the result material into a doughnut-shaped sample holder(S180), polishing the sample on a lapping film(S200), etching the surface by using a sputtering machine(S220), and observing doping profile of the sample from the sample etching scratch by using a SCM(Scanning Capacitance Microscope)(S220).
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