| 摘要 |
PURPOSE: A method for manufacturing buried channel PMOS transistor is provided to increase largely a current driving power by using a buried channel PMOS transistor of a pocket structure restraining a short-channel effect. CONSTITUTION: A process forms an n-type well(16) with an active area of a substrate(10) forming a field oxide layer(12) defining an activated area and an isolation area of a device. The process implants an ion with As as an n-type impurities within the n-type well(16), and then continuously implants an ion with P to form a punch stop area(20,22). The process forms a threshold voltage control area(24) by an ion implantation with p-type impurities within the n-type well(16). The process forms a gate dielectric layer on the top of the active area of the substrate(10), and a gate electrode(G). The process forms a source/drain area implanting the n-type impurities around the substrate(10) exposed between a gate electrode edge and the field oxide layer(12) by utilizing the gate electrode(G) as a mask.
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