METHOD FOR FORMING METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal layer of a semiconductor device is provided to reduce a time for semiconductor manufacturing process by omitting an ashing process for a photoresist pattern and a water cleaning process for a semiconductor substrate after performing the ashing process. CONSTITUTION: A metal is laminated on a semiconductor substrate formed with a contact hole. The laminated metal is etched by using a photoresist pattern. The first ashing process for the photoresist pattern is performed. A water cleaning process for the semiconductor substrate ashen with the photoresist pattern is performed. The second ashing process for the photoresist pattern is performed.