Bipolar transistor with upper heterojunction collector with an improved performance and its method of fabrication at a higher fabrication productivity

摘要

A bipolar transistor with an upper heterojunction collector comprises in particular a stack on a substrate made up of an emitter layer (EM), a base layer (BA) and a collector layer (CO). The surface of the base-emitter junction is of dimensions inferior to those of the surface of the base-collector junction. The material of the base layer (BA) has a lower electric conducting sensitivity to ion implantation than the electric conducting sensitivity of the material of the emitter layer (EM) to the same ion implantation. An Independent claim is included for the method of fabrication of this bipolar transistor with an upper heterojunction collector.