HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device which enhances insulating performance at a plurality of electrode pads, having exposed surfaces for electric connection. SOLUTION: An insulating layer of phosphorus glass 7 and a silicon nitride film 8 at the side and the peripheral portion of the phosphorus glass and the electrode pads 1, 10. The sides of the phosphorus glass 7 and the silicon nitride film 8 are coated by an organic insulating layer 20, and the sides of the electrode pads 1, 10 are exposed.