Semiconductor structure used in integrated circuits comprises conducting pathway folded in trenches in such a way that its length within each trench is double depth of trench

摘要

A semiconductor structure comprises a substrate (10); one or more trenches (15a-d) arranged in the substrate; and a conducting pathway (30) with a first connection (A1) on a first end and a second connection (A2) on a second end. The conducting pathway is folded in the trenches in such a way that its length within each trench is double the depth of the trench. An Independent claim is also included for the production of a semiconductor structure comprising preparing the substrate; forming the trenches; forming a first insulating layer on the substrate and on the trench walls and bases; forming the conducting pathway on the insulating layer; forming a second insulating layer on the conducting pathway; filling the trenches; forming a third insulating layer on the conducting pathway; and forming connections through the third insulating layer.