| 摘要 |
The invention relates to an apparatus for growing thin films onto the surfa ce of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants, the apparatus comprising at least one process chamber (2) having a tightly sealable structure, at least one reacti on chamber having a structure suitable for adapting into the interior of said process chamber (2) and comprising a reaction space (3) of which at least a portion is movable, infeed means (16) connectable to said reaction space (3) for feeding said reactants into said reaction space (3), and outfeed means (12) connectable to said reaction space (3) for discharging excess reactants and reaction gases from said reaction space (3), and at least one substrate adapted into said reaction space (3). At least one loading chamber (1) is arranged to cooperate with said process chamber (2) so as to permit said reaction space (3) or a portion thereof to be moved into said process chamber (2) and away from said process chamber (2) and, further, the operating pressure of the loading chamber is arranged to be controllable independently from said pressure chamber (2). |
