SEMICONDUCTOR MEMORY AND DATA READ-OUT METHOD

摘要

PURPOSE: To provide a semiconductor memory in which an access time in a burst mode is improved without increasing chip area and increasing power consumption. CONSTITUTION: A latch pulse selecting circuit 6 outputs each of inputted control signal SALF and control signal SALS as a latch pulse SAL0A for a first latch group in a latch circuit 7 or a latch pulse SAL1A for a second latch group by a control signal CA0T. A Y selector 12 is connected through a Y switch to which a digit line corresponding to a sense amplifier circuit 8 is connected by control signals YS0-YS31 inputted from a column decoder circuit 11. The sense amplifier circuit 8 is composed of sense amplifiers of 256 pieces, and performs data discrimination of signals YD0-YD127 from the Y selector 12. The latch circuit 7 latches the data signals DT0-DT127 from the sense amplifier circuit 8 to the first latch group and the second latch group by the latch signal SAL0 or SAL1.