| 摘要 |
PURPOSE: Integrated memory with memory cells and reference cells is provided to reduce the device size by repairing a defect of the integrated memory at a redundant memory cell. CONSTITUTION: The integrated memory has memory cells(MC) arranged at the intersection points of word lines(WL1,..) and bit lines(BL1,..), reference cells(CREF) at the intersection points of at least one reference word line(WLREF) ,/WLREF) and the bit lines for generating a reference potential on the bit lines before access to one of the memory cells, redundant memory cells(RC) at the intersection points of a redundant word line(RWL1,..) and the bit lines and a programmable activation unit(AKT) that determines whether to connect in redundant word lines and memory cells.
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