| 摘要 |
PROBLEM TO BE SOLVED: To minimize dislocation introduced into an Si layer when mobility of carrier is improved by introducing strain into an Si layer constituting an SOI structure. SOLUTION: A compression strain SiGe layer whose thickness is at most a critical film thickness is formed on an Si substrate, a thin Si layer is formed adjacent thereto in its non-strain state, the obtained lamination structure is sticked to another Si substrate via an insulation film, compression strain of the SiGe layer is relaxed by removing an Si substrate holding the compression strain SiGe layer, and tensile strain is induced in the adjacent thin Si layer by using the SiGe layer whose strain is relaxed.
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