| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that is excellent in geometry control of fine patterns, and an apparatus for manufacturing the semiconductor device. SOLUTION: Adhesion of unnecessary products on the side walls of the patterns is suppressed by a method of manufacturing the semiconductor device in which process gas is excited by utilizing a plurality of electromagnetic waves each power of which periodically changes with a constant timing relation, and a surface of a substrate of a semiconductor device is processed by using the excited process gas, and by an apparatus for manufacturing the semiconductor device in which a holding table for holding the substrate of the semiconductor device and a plasma source that generates the process gas excited by a plurality of electromagnetic waves each power of which periodically changes with a constant timing relation are possessed. |
